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| MRF161 SILICON N-CHANNEL RF POWER MOSFET DESCRIPTION: The MRF161 is an EnhancementMode N-Channel MOS Broadband RF Power Transistor for Wideband Large Signal Amplifier and Oscillator Applications from 2.0 to 400 MHz. PACKAGE STYLE .500 4L FLG .112x45 A FULL R L S D O.125 NOM. C B G D G F S E MAXIMUM RATINGS ID VDSS VGS PDISS TJ TSTG JC O O H IJ K 900 mA DIM MINIMUM inches / mm MAXIMUM inches / mm 65 V 40 V 17.5 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 10 C/W O O O O A B C D E F G H I J K L .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 .980 / 24.89 1.050 / 26.67 CHARACTERISTICS SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss NF Gps TC = 25 C O NONE TEST CONDITIONS ID = 5.0 mA VDSS = 28 V VGS = 40 V VDS = 10 V VDS = 10 V VDS = 28 V VGS = 0 V VGS = 0 V VDS = 0 V ID = 10 mA ID = 100 mA VGS = 0 V f = 1.0 MHz MINIMUM 65 TYPICAL MAXIMUM 1.0 1.0 UNITS V mA A V mmhos 1.0 80 7.0 9.7 2.3 3.0 11.0 45 13.5 50 6.0 pF dB dB % VDS = 28 V ID = 100 mA f = 400 MHz ZS = 67.7+j = 14.1 ZL = 14.5+j = 25.7 VDD = 28 V IDQ = 50 mA Pout = 5.0 W IDQ = 50 mA Pout = 5.0 W VDD = 28 V VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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